2N7002W Просмотр технического описания (PDF) - PANJIT INTERNATIONAL
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производитель
2N7002W Datasheet PDF : 5 Pages
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2N7002W
ELECTRICAL CHARACTERISTICS
Static
Parameter
S ym b o l
Drain-Source Breakdown Voltage
BVDSS
Gate Threshold Voltage
VGS (th)
Drain-Source On-State Resistance
R
D S (on)
Drain-Source On-State Resistance
RD S (on)
Zero Gate Voltage Drain Current
ID S S
Gate Body Leakage
IG S S
Forward Transconductance
gfS
Dynamic
To ta l Ga te C ha rg e
Qg
Gate-Source Charge
Qg s
Gate-Drain Charge
Q
gd
Turn-On D e la y Ti me
to n
Turn-Off D e la y Ti me
to ff
Input C apaci tance
Ciss
Output Capacitance
Coss
Re ve rs e Tra ns fe r C a p a c i ta nc e
Crss
Source-Drain Diode
Max. Diode Forward Current
Is
Diode Forward Voltage
VSD
Te s t C o nd i ti o n
V G S =0V, ID =10uA
V D S =V G S , ID =2 5 0 uA
V =4.5V, I =75mA
GS
D
VGS=10V, I D =500mA
VD S=60V, VGS=0V
VGS =+20V, VD S =0V
V D S =15V, ID =250mA
V D S =15V, ID =500mA
V =4.5V
GS
VD D =10V , RL=20Ω
ID =500mA , VGEN=10V
RG =10Ω
VD S =25V, VGS =0V
f=1.0MHZ
-
IS=250mA , V G S =0V
Mi n.
Typ .
Max.
Uni ts
60
-
-
V
1
-
2.5
V
-
-
7.5
Ω
-
-
5
-
-
1
uA
-
-
+100
nA
200
-
-
mS
-
0.6
0.7
-
0.1
-
nC
-
0.08
-
-
9
15
ns
-
21
26
-
-
50
-
-
25
pF
-
-
5
-
-
250
mA
-
0.93
1.2
V
Switching
VDD
Test Circuit
VIN
RL
Gate Charge
VDD
Test Circuit
VGS
RL
VOUT
RG
1mA
RG
STAD-JUL.26.2007
PAGE . 2
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