1SS399 Просмотр технического описания (PDF) - Toshiba
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1SS399 Datasheet PDF : 4 Pages
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TOSHIBA Diode Silicon Epitaxial Planar Diode
1SS399
High Voltage, High Speed Switching Applications
1SS399
Unit: mm
Small package
: SC-61
Low forward voltage
: VF = 1.0 V (typ.)
High voltage
: VR = 400 V (min)
Fast reverse recovery time : trr = 0.5 μs (typ.)
Small total capacitance : CT = 2.5 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
420
V
Reverse voltage
VR
400
V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
2*
A
Power dissipation
Junction temperature
P
150
mW
JEDEC
Tj
125
°C
JEITA
―
SC-61
Storage temperature range
Tstg
−55 to 125
°C
TOSHIBA
1-3J1A
Weight: 13 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
IR (1)
IR (2)
CT
trr
Test Condition
IF = 10 mA
IF = 100 mA
VR = 300 V
VR = 400 V
VR = 0 V, f = 1 MHz
IF = 10 mA
(Fig.1)
Min Typ. Max Unit
―
0.8
―
V
―
1.0
1.3
―
― 0.05
μA
―
―
0.1
―
2.5 5.0
pF
―
0.5
―
μs
Start of commercial production
1995-11
1
2015-02-23
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