1N5820-M3 Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
1N5820-M3 Datasheet PDF : 6 Pages
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www.vishay.com
100
10
1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.1
0
0.2
0.4
0.6
0.8
1
93257_01
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0
5
10
15
20
93257_02
VR - Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
VS-1N5820, VS-1N5820-M3
Vishay Semiconductors
150
140
130
DC
120
Square wave
110 (D = 0.5)
100
see note (1)
90
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
93257_04
IF(AV) - Average Forward Current (A)
Fig. 4 - Typical Average Forward Current vs.
Allowable Lead Temperature
1.4
D = 0.20
1.2
D = 0.25
D = 0.33
1
D = 0.50
D = 0.75
0.8
RMS Limit
0.6
DC
0.4
0.2
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
93257_05
Average Forward Current - IF(AV) (A)
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
1000
TJ = 25 °C
100
At Any Rated Load Condition
And With rated VRRM Applied
Following Surge
100
0
5
10
15
20
93257_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
10
100
1000
10 000
93257_06
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D)
Revision: 11-Oct-11
3
Document Number: 93257
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