1N5820-M3 Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
1N5820-M3 Datasheet PDF : 6 Pages
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www.vishay.com
VS-1N5820, VS-1N5820-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum reverse leakage current
IRM (1)
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
3A
9.4 A
TJ = 25 °C
TJ = 25 °C
TJ = 100 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
TYP.
0.41
0.49
0.05
8.1
350
9.0
-
MAX.
0.475
0.85
2.0
20
-
-
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
TJ (1), TStg
RthJL
With fin 20 x 20 (0.79 x 0.79) 1.0 thick
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
Without cooling fin
Approximate weight
Marking device
Case style C-16
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES
- 65 to 150
UNITS
°C
34
°C/W
80
1.2
g
0.042
oz.
1N5820
Revision: 11-Oct-11
2
Document Number: 93257
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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