1N1614R Просмотр технического описания (PDF) - Microsemi Corporation
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1N1614R Datasheet PDF : 3 Pages
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
Qualified per MIL-PRF-19500/162
• Glass Passivated Die
• Glass to Metal Seal Construction
• VRRM 200 to 1000 Volts
DEVICES
1N1614
1N1615
1N1616
1N4458
1N4459
1N1614R
1N1615R
1N1616R
1N4458R
1N4459R
LEVELS
JAN
JANTX
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Peak Repetitive Reverse Voltage
1N1614
1N1615
1N1616
1N4458
1N4459
1N1614R
1N1615R
1N1616R
1N4458R
1N4459R
Average Forward Current, TC = 150°
Peak Surge Forward Current @ tp = 8.3ms, half sinewave,
TC = 150°C
Thermal Resistance, Junction to Case
Operating Case Temperature Range
Storage Temperature Range
Symbol
VRWM
IF
IFSM
RθJC
Tj
TSTG
Value
200
400
600
800
1000
15
100
4.5
-65°C to 175°C
-65°C to 175°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Forward Voltage
IFM = 15A, TC = 25°C*
Reverse Current
VRM = 200, TC = 25°C
VRM = 400, TC = 25°C
VRM = 600, TC = 25°C
VRM = 800, TC = 25°C
VRM = 1000, TC = 25°C
Reverse Current
VRM = 200, TC = 150°C
VRM = 400, TC = 150°C
VRM = 600, TC = 150°C
VRM = 800, TC = 150°C
VRM = 1000, TC = 150°C
1N1614
1N1615
1N1616
1N4458
1N4459
1N1614
1N1615
1N1616
1N4458
1N4459
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
Symbol
VFM
1N1614R
1N1615R
1N1616R
IRM
1N4458R
1N4459R
1N1614R
1N1615R
1N1616R
IRM
1N4458R
1N4459R
Min.
Max.
1.5
50
500
Note:
Unit
V
A
A
°C/W
°C
°C
Unit
V
μA
μA
DO-203AA (DO-4)
T4-LDS-0139 Rev. 1 (091749)
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