IRFD110 Просмотр технического описания (PDF) - Intersil
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IRFD110 Datasheet PDF : 6 Pages
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IRFD110
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 4)
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
D
Junction Diode
G
MIN
TYP
MAX UNITS
-
-
1.0
A
-
-
8.0
A
S
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25oC, ISD = 1.0A, VGS = 0V (Figure 12)
-
Reverse Recovery Time
trr
TJ = 150oC, ISD = 1.0A, dISD/dt = 100A/µs
-
Reverse Recovery Charge
QRR
TJ = 150oC, ISD = 1.0A, dISD/dt = 100A/µs
-
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. VDD = 25V, starting TJ = 25oC, L = 28.5mH, RG = 25Ω, peak IAS = 1.0A.
4. Repetitive rating: pulse width limited by maximum junction temperature.
-
2.5
V
100
-
ns
0.2
-
µC
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
1.0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
10
1
OPERATION IN THIS
0.1 AREA MAY BE
LIMITED BY rDS(ON)
100µs
1ms
10ms
100ms
0.01 TJ = MAX RATED
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
DC
100
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
5
VGS = 10V
VGS = 9V
VGS = 8V
4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 7V
3
VGS = 6V
2
1
VGS = 5V
VGS = 4V
0
0
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. OUTPUT CHARACTERISTICS
4-271
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