RJK60S7DPP-E0 Просмотр технического описания (PDF) - Renesas Electronics
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RJK60S7DPP-E0 Datasheet PDF : 7 Pages
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RJK60S7DPP-E0
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
100
di/dt = 100 A/μs
VGS = 0, Ta = 25°C
10
1
10
100
Reverse Drain Current IDR (A)
COSS Stored Energy (Typical)
6
5
4
3
2
1
0
0 50 100 150 200 250 300
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
100
Ta = 125°C
10
25°C
1
0.1
0
VGS = 0
Pulse Test
0.4
0.8
1.2
1.6
Source to Drain Voltage VSD (V)
Preliminary
100000
10000
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 100 kHz
Ta = 25°C
Ciss
100
Coss
10
Crss
1
0.1
0
50 100 150 200 250 300
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics (Typical)
800 ID = 30 A
Ta = 25°C
16
VGS
600
VDS
400
12
VDD = 480 V
300 V
100 V 8
200
0
0
VDD = 480 V
4
300 V
100 V
0
20
40
60
80
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
6
5
ID = 10 mA
4
3
1 mA
0.1 mA
2
1
VDS = 10 V
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0643EJ0100Rev.1.00
Apr 23, 2012
Page 4 of 6
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