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2SA1030 Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SA1030
Silicon PNP Epitaxial
Renesas Electronics
2SA1030 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SA1029, 2SA1030
Electrical Characteristics
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
Symbol
V
(BR)CBO
2SA1029
Min Typ Max
–30 —
—
2SA1030
Min Typ Max
–55 —
—
V
(BR)CEO
–30
—
— –50 —
—
V
(BR)EBO
–5
—
—
–5
—
—
I
CBO
—
— –0.5 —
— –0.5
I
EBO
—
— –0.5 —
— –0.5
h
FE
*
1
100
—
500 100
—
320
Base to emitter voltage
V
BE
—
— –0.8 —
— –0.8
Collector to emitter
saturation voltage
V
CE(sat)
—
— –0.2 —
— –0.2
Gain bandwidth product
f
T
200 280 — 200 280 —
Collector output
Cob
—
3.3
4.0
—
3.3
4.0
capacitance
Note: 1. The 2SA1029 and 2SA1030 are grouped by h
FE
as follows.
B
C
D
2SA1029 100 to 200 160 to 320 250 to 500
2SA1030 100 to 200 160 to 320 —
(Ta = 25°C)
Unit
Test conditions
V I
C
= –10 µA, I
E
= 0
V I
C
= –1 mA, R
BE
=
∞
V I
E
= –10
µ
A, I
C
= 0
µ
A
µ
A
V
V
MHz
pF
V
CB
= –18 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
I
C
= –2 mA
V
CE
= –12 V,
I
C
= –2 mA
I
C
= –10 mA,
I
B
= –1 mA
V
CB
= –12 V,
I
C
= –2 mA
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
Rev.3.00 Aug 10, 2005 page 2 of 5
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