MMBZ12VALT1G Просмотр технического описания (PDF) - ON Semiconductor
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MMBZ12VALT1G Datasheet PDF : 7 Pages
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MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
TYPICAL CHARACTERISTICS
18
1000
15
100
12
10
9
1
6
3
0.1
0
− 40
0
+ 50
+ 100
TEMPERATURE (C)
+ 150
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
320
280
240
200
5.6 V
160
120
15 V
80
40
0
0
1
2
3
BIAS (V)
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
0.01
− 40
+ 25
+ 85
TEMPERATURE (C)
Figure 2. Typical Leakage Current
versus Temperature
+ 125
60
50
40
27 V
30
20
10
33 V
0
0
1
2
3
BIAS (V)
Figure 4. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
300
250
ALUMINA SUBSTRATE
200
150
100
FR−5 BOARD
50
0
0
25
50 75 100 125 150 175
TEMPERATURE (C)
Figure 5. Steady State Power Derating Curve
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4
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