BD230 Просмотр технического описания (PDF) - Philips Electronics
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BD230 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN power transistors
Product specification
BD226; BD228; BD230
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
VBEsat
VBE
fT
hh----FF---EE---12-
collector cut-off current
IE = 0; VCB = 30 V
−
IE = 0; VCB = 30 V; Tj = 125 °C
−
emitter cut-off current
IC = 0; VEB = 5 V
−
DC current gain
VCE = 2 V; see Fig.2
IC = 5 mA
40
IC = 150 mA
40
IC = 1 A
25
collector-emitter saturation voltage IC = 1 A; IB = 0.1 A
−
base-emitter saturation voltage IC = 1 A; IB = 0.1 A
−
base-emitter voltage
IC = 1 A; VCE = 2 V; note 1
−
transition frequency
IC = 50 mA; VCE = 5 V; f = 100 MHz −
DC current gain ratio of the
IC = 150 mA; VCE = 2 V
−
complementary pairs
−
100
−
10
−
100
−
−
−
250
−
−
−
0.8
−
1.2
−
1.3
125 −
1.3 1.6
nA
µA
nA
V
V
V
MHz
Note
1. VBE decreases by about 2.3 mV/K with increasing temperature.
handbook1,0fu0ll pagewidth
hFE
80
60
40
20
0
10−1
VCE = 2 V.
MGD842
1
10
102
Fig.2 DC current gain; typical values.
103
104
IC (mA)
1997 Mar 06
4
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