VS-18TQ035STRLPBF Просмотр технического описания (PDF) - Vishay Semiconductors

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VS-18TQ035STRLPBF

Schottky Rectifier, 18 A

Vishay Semiconductors 

VS-18TQ035SPbF, VS-18TQ040SPbF, VS-18TQ045SPbF

Vishay High Power Products Schottky Rectifier, 18 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

See fig. 1

VFM (1)

Maximum reverse leakage current

See fig. 2

IRM (1)

Maximum junction capacitance

Typical series inductance

Maximum voltage rate of change

CT

LS

dV/dt

Note

(1) Pulse width < 300 μs, duty cycle < 2 %

TEST CONDITIONS

18 A

36 A

TJ = 25 °C

18 A

36 A

TJ = 125 °C

TJ = 25 °C

TJ = 125 °C

VR = Rated VR

VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C

Measured lead to lead 5 mm from package body

Rated VR

VALUES

0.60

0.72

0.53

0.67

2.5

25

1400

8.0

10 000

UNITS

V

mA

pF

nH

V/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction and

storage temperature range

TJ, TStg

Maximum thermal resistance,

junction to case

RthJC

DC operation

See fig. 4

Typical thermal resistance,

case to heatsink

RthCS

Mounting surface, smooth and greased

Approximate weight

Mounting torque

minimum

maximum

Marking device

Case style D2PAK

VALUES

- 55 to 175

UNITS

°C

1.50

°C/W

0.50

2

g

0.07

oz.

6 (5)

12 (10)

kgf · cm

(lbf · in)

18TQ035S

18TQ040S

18TQ045S

www.vishay.com

2

For technical questions, contact: diodestech@vishay.com

Document Number: 94150

Revision: 12-Mar-10

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