SI4048DY Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4048DY Datasheet PDF : 10 Pages
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Si4048DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
TJ = 150 °C
10
TJ = 25 °C
1
0.04
ID = 15 A
0.03
0.02
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
TJ = 125 °C
0.01
TJ = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.5
140
0.2
112
- 0.1
- 0.4
84
ID = 5 mA
56
- 0.7
- 1.0
- 50 -- 25
ID = 250 μA
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
28
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
0.01
0.01
TA = 25 °C
Single Pulse
0.1
1
DC
BVDSS
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 66816
S10-2009-Rev. A, 06-Sep-10
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