SEMIX302GB12T4S Просмотр технического описания (PDF) - Semikron

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Компоненты Описание

производитель

SEMIX302GB12T4S

Trench IGBT Modules

Semikron 

SEMiX 302GB12T4s

SEMiX®2s

Trench IGBT Modules

Characteristics

Symbol Conditions

Inverse Diode

C  

C.

C

622<

G



6C  ;.. "? 3  . 

6C  ;.. "

#I#  8;.. "IB

-  () * ,

-  '). * ,

-  () *

-  '). *

-  () *

-  '). *

-  '). *

3  D') ?   9.. 

2-D/

Module

  ##

min.

typ.

(4')

(4.)

'4;

.4=

(4:

;4:

(;.

).

'=

max. Units

(48)



(48



'4)



'4'



;4(

5

84;

5

"

B

J

.4'7 LI&

SEMiX 302GB12T4s

SEMiX 302GAL12T4s

SEMiX 302GAR12T4s

Target Data

Features

   

       

      

  

    !

Typical Applications

M

2NEN

 ,4  D

  () *

  '() *

2D

  #

<

   O <)

<

   <9



Temperature sensor

2'..

K'..I'()

'..* 2()) O5

22'.. +RK'..I'()'ID'I'..S?

RLS

':



.47

5

'

5

.4.8)

LI&

;

)

P

(4)

)

P

().



.48=;>)Q

O5

;)).>(Q

L

 "    # 

 $%

   & #

Remarks

      # 

'()* +,

 %#  !    #

 -').*

 /     

 !   0

234.4)54

23 4.4)54

234+(4(5 4

24+.4)5 

This is an electrostatic discharge sensitive device (ESDS), international standard

IEC 60747-1, Chapter IX.

This technical information specifies semiconductor devices but promises no

characteristics. No warranty or guarantee expressed or implied is made regarding

delivery, performance or suitability.

GB

GAL

GAR

2

26-07-2007 SCH

© by SEMIKRON

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