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Компоненты Описание
SEMIX241DH16S(2010) Просмотр технического описания (PDF) - Semikron
Номер в каталоге
Компоненты Описание
производитель
SEMIX241DH16S
(Rev.:2010)
Bridge Rectifier Module (halfcontrolled)
Semikron
SEMIX241DH16S Datasheet PDF : 4 Pages
1
2
3
4
SEMiX241DH16s
SEMiX
®
13
Bridge Rectifier Module
(halfcontrolled)
SEMiX241DH16s
Features
• Terminal height 17 mm
• Chips soldered directly to isolated
substrate
Typical Applications*
• Input Bridge Rectifier for AC/DC motor
control
• Power supply
Absolute Maximum Ratings
Symbol Conditions
Chip
I
T(AV)
sinus 180°
I
TSM
10 ms
i
2
t
10 ms
V
RSM
V
RRM
V
DRM
(di/dt)
cr
(dv/dt)
cr
T
j
Module
T
stg
V
isol
T
j
= 130 °C
T
j
= 130 °C
AC sinus 50Hz
T
c
= 85 °C
T
c
= 100 °C
T
j
= 25 °C
T
j
= 130 °C
T
j
= 25 °C
T
j
= 130 °C
1 min
1s
Characteristics
Symbol Conditions
Chip
V
T
V
T(TO)
r
T
I
DD
;I
RD
t
gd
t
gr
t
q
I
H
I
L
V
GT
I
GT
V
GD
I
GD
R
th(j-c)
R
th(j-c)
R
th(j-c)
T
j
= 25 °C, I
T
= 300 A
T
j
= 130 °C
T
j
= 130 °C
T
j
= 130 °C, V
DD
= V
DRM
; V
RD
= V
RRM
T
j
= 25 °C, I
G
= 1 A, di
G
/dt = 1 A/µs
V
D
= 0.67 * V
DRM
T
j
= 130 °C
T
j
= 25 °C
T
j
= 25 °C, R
G
= 33
Ω
T
j
= 25 °C, d.c.
T
j
= 25 °C, d.c.
T
j
= 130 °C, d.c.
T
j
= 130 °C, d.c.
per thyristor
per module
sin. 180°
per thyristor
per module
per thyristor
per module
Module
R
th(c-s)
M
s
M
t
a
w
per chip
per module
to heat sink (M5)
to terminals (M6)
Values
240
200
2250
1900
25300
18000
1700
1600
1600
100
1000
-40 ... 130
-40 ... 125
4000
4800
Unit
A
A
A
A
A
2
s
A
2
s
V
V
V
A/µs
V/µs
°C
°C
V
V
min.
3
150
3
2.5
typ. max. Unit
1.9
V
0.85
V
4
m
Ω
24
mA
1
µs
2
µs
150
µs
150
250
mA
300
600
mA
V
mA
0.25
V
6
mA
K/W
K/W
0.32 K/W
0.32 K/W
K/W
K/W
K/W
0.04
K/W
5
Nm
5
Nm
5 * 9,81 m/s
2
350
g
DH
© by SEMIKRON
Rev. 29 – 05.03.2010
1
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