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K9G4G08B0A Просмотр технического описания (PDF) - Samsung

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Компоненты Описание
производитель
K9G4G08B0A
Samsung
Samsung Samsung
K9G4G08B0A Datasheet PDF : 44 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
K9L8G08U1A
K9G4G08U0A K9G4G08B0A
Preliminary
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
Short Circuit Current
K9XXG08XXA-XCB0
K9XXG08XXA-XIB0
K9XXG08XXA-XCB0
K9XXG08XXA-XIB0
Symbol
VCC
VIN
VI/O
TBIAS
TSTG
Ios
Rating
Unit
-0.6 to + 4.6
-0.6 to + 4.6
V
-0.6 to Vcc+0.3 (<4.6V)
-10 to +125
°C
-40 to +125
-65 to +150
°C
5
mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9XXG08XXA-XCB0 :TA=0 to 70°C, K9XXG08XXA-XIB0:TA=-40 to 85°C)
Parameter
K9G4G08B0A(2.7V)
K9G4G08U0A(3.3V)
Symbol
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
VCC
2.5
2.7
2.9
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
0
0
0
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
K9G4G08X0A
Parameter
Symbol
Test Conditions
2.7V
3.3V
Min Typ Max Min Typ Max
Page Read with
Operating Serial Access
Current Program
ICC1
ICC2
tRC=50ns, CE=VIL
IOUT=0mA
-
-
15 30
-
15 30
-
15 30
-
15 30
Erase
ICC3
-
-
15 30
-
15 30
Stand-by Current(TTL)
ISB1 CE=VIH, WP=PRE=0V/VCC
-
-
1
-
-
1
Stand-by Current(CMOS)
CE=VCC-0.2,
ISB2
WP=PRE=0V/VCC
-
10 50
-
10 50
Input Leakage Current
ILI VIN=0 to Vcc(max)
-
- ±10 -
- ±10
Output Leakage Current
ILO VOUT=0 to Vcc(max)
-
- ±10 -
- ±10
Input High Voltage
VIH*
VCC
VCC
VCC
-
-
2.0
-
-0.4
+0.3
+0.3
Input Low Voltage, All inputs
VIL*
-
-0.3 - 0.5 -0.3 - 0.8
Output High Voltage Level
K9G4G08B0A :IOH=-100µA
VOH
K9G4G08U0A :IOH=-400µA
VCC
-
-
2.4
-
-
-0.4
Output Low Voltage Level
K9G4G08B0A :IOL=100uA
VOL
K9G4G08U0A :IOL=2.1mA
-
-
0.4
-
- 0.4
Output Low Current(R/B)
K9G4G08B0A :VOL=0.1V
IOL(R/B)
K9G4G08U0A :VOL=0.4V
3
4
-
8
10
-
NOTE :
1. VIL can undershoot to -0.4V and VIH can overshoot to VCC + 0.4V for durations of 20 ns or less.
2. Typical value is measured at Vcc=2.7V/3.3V, TA=25°C. Not 100% tested.
3. The typical value of the K9L8G08U1A’s ISB2 is 20µA and the maximum value is 100µA.
Unit
mA
µA
V
mA
10

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