BUX21A Просмотр технического описания (PDF) - Comset Semiconductors

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BUX21A

HIGH CURRENT, HIGH SPEED , HIGH POWER DISSIPATION TRANSISTOR

Comset Semiconductors 

NPN BUX21A

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s) Min Typ Max Unit

VCEO(SUS)

Collector-Emitter Sustaining

Voltage (*)

IC=200 mA

200 -

VEB0(SUS)

Emitter-Base Breakdown

Voltage (*)

IC=0A , IE=50 mA

7

-

ICEO

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

hFE

DC Current Gain (*)

VCE=160 V , IB=0A

-

-

VCE= 250V , VBE= -1.5V

-

-

VCE= 250V , VBE= -1.5V

Tcase = 125°C

-

-

VEB=5.0 V, IC=0

-

-

IC=12 A , VCE=2.0 V

20 -

IC=25 A , VCE=4.0 V

10 -

VCE(SAT)

VBE(SAT)

Collector-Emitter saturation

Voltage (*)

Base-Emitter saturation Voltage

(*)

IC=12 A , IB=1.2 A

IC=25 A , IB=3 A

www.DataSheet.net/

IC=25 A , IB=3 A

- 0.7

-

-

-

-

IS/B

Second breakdown collector

current

VCE=20 V , ts = 1s

VCE=140 V , ts = 1s

17.5 -

0.15 -

fT

Transition frequency

VCE=15 V , IC=2 A

f=10 MHz

8

-

ton

Turn-on time

IC=25 A , IB=3 A

VCC=100 V

-

-

ts

Storage time

tf

File time

IC=25 A , VCC=100 V

IB1 = -IB2 =3 A

-

-

-

-

-

V

-

V

3 mA

3

12 mA

1 mA

60

-

-

0.9

1.5 V

1.5

-

-

A

- MHz

1.2

1.8 µs

0.4

(*) Pulse Duration = 300 µs, Duty Cycle <= 2%

26/10/2012

COMSET SEMICONDUCTORS

2|3

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