FQP6N60C Просмотр технического описания (PDF) - Fairchild Semiconductor
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FQP6N60C Datasheet PDF : 10 Pages
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Typical CharacteristicsTypical Characteristics (Continued)
101 Top :
15V.0GSV
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
100 Bottom: 4.5 V
10-1
10-2
10-1
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
6
5
VGS = 10V
4
3
2
VGS = 20V
1
※ Note : TJ = 25℃
0
0
2
4
6
8
10
12
14
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1000
800
600
400
200
0
10-1
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
Ciss
Coss
Crss
※ Note ;
1.
2.
fV=GS1=M0HVz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
100
25oC
-55oC
10-1
2
※ Notes :
1.
2.
V25DS0µ=s40PVulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
2V5G0S µ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : ID = 5.5A
0
0
4
8
12
16
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
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