ZXMN6A07FTA Просмотр технического описания (PDF) - Zetex => Diodes
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ZXMN6A07FTA Datasheet PDF : 7 Pages
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ZXMN6A07F
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
SYMBOL MIN.
V(BR)DSS 60
IDSS
IGSS
VGS(th)
1.0
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Qg
Qgs
Qgd
VSD
Reverse Recovery Time (3)
trr
Reverse Recovery Charge (3)
Qrr
NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
TYP.
0.3
2.3
166
19.5
8.7
1.8
1.4
4.9
2.0
1.65
3.2
0.67
0.82
0.8
20.5
21.3
MAX. UNIT
CONDITIONS.
V ID=250µA, VGS=0V
1
µA VDS=60V, VGS=0V
100
nA VGS=±20V, VDS=0V
3.0
V ID=250µA, VDS= VGS
0.40
Ω VGS=10V, ID=1.8A
0.55
Ω VGS=4.5V, ID=1.3A
S VDS=15V,ID=1.8A
pF
pF
VDS=40 V, VGS=0V,
f=1MHz
pF
ns
ns VDD =30V, ID=1.8A
ns RG=6.0Ω, VGS=10V
ns
nC VDS=30V, VGS=5V,
ID=1.8A
nC
nC
VDS=30V,VGS=10V,
ID=1.8A
nC
0.95
V TJ=25°C, IS=0.45A,
VGS=0V
ns TJ=25°C, IF=1.8A,
nC di/dt= 100A/µs
ISSUE 1 - MARCH 2002
4
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