SMP100LC-XXX Просмотр технического описания (PDF) - STMicroelectronics
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SMP100LC-XXX Datasheet PDF : 8 Pages
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SMP100LC-xxx
Pulse waveform:
% IPP
10 / 1000 µs tr = 10 µs tp = 1000 µs
100
8 / 20 µs
tr = 8 µs tp = 20 µs
5 / 310 µs tr = 5 µs tp = 310 µs
50
1 / 20 µs
tr = 1 µs tp = 20 µs
2 / 10 µs
tr = 2 µs tp = 10 µs
0
tr
tp
t
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
VRM
IRM
VR
IR
VBR
VBO
IH
IBO
IPP
C
Parameter
Stand-off voltage
Leakage current at VRM
Continuous reverse voltage
Leakage current
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Peak pulse current
Capacitance
DYNAMIC PARAMETERS
Type
IRM @ VRM
max.
IR @ VR
max.
Note 1
VBO @ IBO
max.
Note 2
µA
V
µA
V
V
SMP100LC-140
2
120
50
140
185
SMP100LC-200
2
170
50
200
265
SMP100LC-270
2
230
50
262
350
Note 1:
Note 2:
Note 3:
Note 4:
IR measured at VR guarantee VBR > VR
VRISE = 100V/µS, di/dt < 10 A/µs, IPP = 100A
VRISE = 1kV/µS, di/dt < 10 A/µs, IPP = 10A
VBO parameters are given by a KeyTek ”System 2” generator with PN2461 module.
See test circuits 3 for VBO dynamic parameters
See functional holding current test circuit 1
VR=50V bias, VRMS=1V, F=1MHz.
mA
800
800
800
IH
min.
Note 3
mA
150
150
150
C
typ.
Note 4
pF
30
30
30
3/8
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