MX29F400TTC-90 Просмотр технического описания (PDF) - Macronix International

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производитель

MX29F400TTC-90

4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY

Macronix International 

MX29F400T/B

CAPACITANCE TA = 25oC, f = 1.0 MHz

SYMBOL PARAMETER

MIN.

TYP

MAX.

UNIT

CIN1

Input Capacitance

8

pF

CIN2

Control Pin Capacitance

12

pF

COUT

Output Capacitance

12

pF

CONDITIONS

VIN = 0V

VIN = 0V

VOUT = 0V

READ OPERATION

DC CHARACTERISTICS TA = 0oC to 70oC, -40oC to 125oC, VCC = 5V ±10%

SYMBOL PARAMETER

MIN.

TYP MAX.

ILI

Input Leakage Current

1

ILO

Output Leakage Current

10

ISB1

Standby VCC current

1

ISB2

1(Note3) 5(Note3)

ICC1

Operating VCC current

40

ICC2

50

VIL

Input Low Voltage

-0.3(NOTE 1)

0.8

VIH

Input High Voltage(NOTE 2) 2.0

VCC + 0.3

VOL

Output Low Voltage

0.45

VOH1 Output High Voltage(TTL) 2.4

VOH2 Output High Voltage(CMOS) VCC-0.4

UNIT

uA

uA

mA

uA

mA

mA

V

V

V

V

V

NOTES:

1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns.

VIL min. = -2.0V for pulse width is equal to or less than 20 ns.

2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns

If VIH is over the specified maximum value, read operation cannot be guaranteed.

3. ISB2 20uA max. for Automotive grade.

CONDITIONS

VIN = GND to VCC

VOUT = GND to VCC

CE = VIH

CE = VCC ± 0.3V

IOUT = 0mA, f=5MHz

IOUT= 0mA, f=10MHz

IOL = 2.1mA

IOH = -2mA

IOH = -100uA,VCC=VCC MIN

P/N:PM0439

REV. 1.6, NOV. 12, 2001

17

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