AM29LV017B-120EI Просмотр технического описания (PDF) - Advanced Micro Devices

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производитель

AM29LV017B-120EI

16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory

Advanced Micro Devices 

Addresses

27h

28h

29h

2Ah

2Bh

2Ch

2Dh

2Eh

2Fh

30h

31h

32h

33h

34h

35h

36h

37h

38h

39h

3Ah

3Bh

3Ch

Addresses

40h

41h

42h

43h

44h

45h

46h

47h

48h

49h

4Ah

4Bh

4Ch

PRELIMINARY

Data

15h

00h

00h

00h

00h

01h

1Fh

00h

00h

01h

00h

00h

00h

00h

00h

00h

80h

00h

00h

00h

00h

00h

Table 6. Device Geometry Definition

Device Size = 2N byte

Description

Flash Device Interface description (refer to CFI publication 100)

Max. number of byte in multi-byte write = 2N

(00h = not supported)

Number of Erase Block Regions within device

Erase Block Region 1 Information

(refer to the CFI specification or CFI publication 100)

Erase Block Region 2 Information

Erase Block Region 3 Information

Erase Block Region 4 Information

Table 7. Primary Vendor-Specific Extended Query

Data

Description

50h

52h

Query-unique ASCII string “PRI”

49h

31h

Major version number, ASCII

30h

Minor version number, ASCII

01h

Address Sensitive Unlock

0 = Required, 1 = Not Required

02h

Erase Suspend

0 = Not Supported, 1 = To Read Only, 2 = To Read & Write

01h

Sector Protect

0 = Not Supported, X = Number of sectors in per group

01h

Sector Temporary Unprotect: 00 = Not Supported, 01 = Supported

Sector Protect/Unprotect scheme

04h

01 = 29F040 mode, 02 = 29F016 mode,

03 = 29F400 mode, 04 = 29LV800A mode

00h

Simultaneous Operation: 00 = Not Supported, 01 = Supported

00h

Burst Mode Type: 00 = Not Supported, 01 = Supported

00h

Page Mode Type: 00 = Not Supported, 01 = 4 Word Page,

02 = 8 Word Page

Am29LV017B

14

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