IRFD310 Просмотр технического описания (PDF) - Intersil
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IRFD310 Datasheet PDF : 6 Pages
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IRFD310
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRFD310
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400
400
0.4
1.6
±20
1.0
0.008
V
V
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
45
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BVDSS ID = 250µA, VGS = 0V (Figure 9)
400
-
-
V
VGS(TH) VGS = VDS, ID = 250µA
2.0
-
4.0
V
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
-
-
25
µA
-
250 µA
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
0.4
-
-
A
IGSS VGS = ±20V
-
- ±100 nA
rDS(ON) ID = 0.2A, VGS = 10V (Figures 7, 8)
-
3.3 3.6
Ω
gfs
VDS ≥ 10V, ID = 1.2A (Figure 11)
1.0 1.2
-
S
td(ON)
tr
td(OFF)
VDD = 0.5 x Rated BVDSS, ID ≈ 0.4A, RG = 9.1Ω,
VGS = 10V, RL = 495Ω for VDSS = 200V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
3.0 10
ns
-
10 20
ns
-
5.0 10
ns
tf
-
8.0 15
ns
Qg(TOT) VGS = 10V, ID = 0.4A, VDS = 0.8 x Rated BVDSS
-
Ig(REF) = 1.5mA (Figure 13)
Qgs
Gate Charge is Essentially Independent of Operating
Temperature
-
Qgd
-
6.0 7.5 nC
3.0
-
nC
3.0
-
nC
CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10)
-
135
-
pF
COSS
-
35
-
pF
CRSS
-
8.0
-
pF
LD
Measured From Drain
Modified MOSFET
-
4.0
-
nH
Lead, 2.0mm (0.08in) From Symbol Showing the
Package to Center of Die Internal Device
LS
Measured From the Source Inductances D
Lead, 2.0mm (0.08in) from
-
6.0
-
nH
Package to Source
LD
Bonding Pad
G
LS
Thermal Resistance, Junction to Ambient
RθJA Free Air Operation
S
-
-
120 oC/W
4-294
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