6S0965R Просмотр технического описания (PDF) - Fairchild Semiconductor

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6S0965R

Fairchild Power Switch(FPS)

Fairchild Semiconductor 

FS6S-SERIES FS6S0965RT/FS6S1265RB

Electrical Characteristics (SenseFET Part)

(Ta = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min. Typ. Max. Unit

FS6S0965RT

Drain Source Breakdown Voltage

BVDSS VGS = 0V, ID = 50µA

650 -

-

V

VDS=Max., Rating, VGS=0V -

Zero Gate Voltage Drain Current

IDSS

VDS= 0.8Max., Rating,

VGS = 0V, TC = 125°C

-

Static Drain-Source On Resistance (1) RDS(on) VGS = 10V, ID = 4.5A

-

Forward Transconductance(1)

gfs

VDS = 50V, ID = 4.5A

-

- 200 µA

- 300 µA

1.1 1.2 Ω

-

-

S

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Ciss

Coss

Crss

VGS = 0V, VDS = 25V,

f = 1MHz

- 1300 -

- 135 -

pF

-

25

-

Turn On Delay Time

Rise Time

Turn Off Delay Time

Fall Time

td(on) VDD = 0.5BVDSS, ID = 9.0A

-

25

-

tr

td(off)

(MOSFET switching

time is essentially

independent of

-

75

-

- 130 -

nS

tf

operating temperature)

-

70

-

Total Gate Charge

(Gate-Source+Gate-Drain)

Gate-Source Charge

Gate-Drain (Miller) Charge

Qg

VGS = 10V, ID = 9.0A,

VDS = 0.5BVDSS(MOSFET

-

45

-

Qgs

switching time is

-

8

-

essentially independent of

nC

Qgd operating temperature)

-

22

-

FS6S1265RB

Drain-Source Breakdown Voltage

BVDSS VGS = 0V, ID = 50µA

650 -

-

V

VDS=Max, Rating, VGS = 0V -

Zero Gate Voltage Drain Current

IDSS

VDS= 0.8Max, Rating,

VGS = 0V, TC = 125°C

-

Static Drain-Source on Resistance (1) RDS(on) VGS = 10V, ID = 4.5A

-

Forward Transconductance(1)

gfs

VDS = 50V, ID = 4.5A

-

- 200 µA

- 300 µA

0.7 0.9 Ω

-

-

S

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Ciss

Coss

Crss

VGS = 0V, VDS = 25V,

f = 1MHz

- 1820 -

- 185 -

pF

-

32

-

Turn On Delay Time

Rise Time

Turn Off Delay Time

Fall Time

td(on) VDD = 0.5BVDSS, ID = 12.0A -

38

-

tr

td(off)

(MOSFET switching

time are essentially

independent of

- 120 -

nS

- 200 -

tf

operating temperature)

- 100 -

Total Gate Charge

(Gate-Source+Gate-Drain)

Gate-Source Charge

Gate-Drain (Miller) Charge

Qg

VGS = 10V, ID = 12.0A,

VDS = 0.5BVDSS(MOSFET

-

60

-

Qgs

switching time are

essentially independent of

-

10

-

nC

Qgd operating temperature)

-

30

-

3

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