DRDN005W(Rev8-2) Просмотр технического описания (PDF) - Diodes Incorporated.
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DRDN005W Datasheet PDF : 9 Pages
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Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor @ TA = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Vl(off)
Vl(on)
VO(on)
Il
IO(off)
Gl
fT
Min Typ Max Unit
Test Condition
0.5
V VCC = 5V, IO = 100µA
3.0 V VO = 0.3V, IO = 20mA
0.3V V IO/Il = 50mA/2.5mA
28 mA VI = 5V
0.5 µA VCC = 50V, VI = 0V
47
VO = 5V, IO = 50mA
200
MHz
VCE = 10V, IE = 5mA,
f = 100MHz
Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor @ TA = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Vl(off)
Vl(on)
VO(on)
Il
IO(off)
Gl
fT
Min Typ Max Unit
Test Condition
-0.3
V VCC = -5V, IO = -100µA
-2.0 V VO = -0.3V, IO = -20mA
-0.3V V IO/Il = -50mA/-2.5mA
-7.2 mA VI = -5V
-0.5 µA VCC = -50V, VI = 0V
56
VO = -5V, IO = -50mA
200
MHz
VCE = -10V, IE = -5mA,
f = 100MHz
Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor @ TA = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Vl(off)
Vl(on)
VO(on)
Il
IO(off)
Gl
fT
Min Typ Max Unit
Test Condition
-0.5
V VCC = -5V, IO = -100µA
-3.0 V VO = -0.3V, IO = -20mA
-0.3V V IO/Il = -50mA/-2.5mA
-28 mA VI = -5V
-0.5 µA VCC = -50V, VI = 0V
47
VO = -5V, IO = -50mA
200
MHz
VCE = -10V, IE = -5mA,
f = 100MHz
Electrical Characteristics, Switching Diode @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 4)
Forward Voltage (Note 4)
Symbol
V(BR)R
VF
Reverse Current (Note 4)
IR
Total Capacitance
CT
Reverse Recovery Time
trr
Notes: 4. Short duration pulse test used to minimize self-heating effect.
Min
75
0.62
Max
0.72
0.855
1.0
1.25
2.5
50
30
25
4.0
4.0
Unit
V
µA
µA
µA
nA
pF
ns
Test Condition
IR = 10µA
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
VR = 75V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
DS30573 Rev. 8 - 2
4 of 9
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