CC1110FX Просмотр технического описания (PDF) - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS

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CC1110FX

Low-power sub-1 GHz RF System-on-Chip (SoC) with MCU, memory, transceiver, and USB controller

TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS 

CC1110Fx / CC1111Fx

7.5 32.768 kHz Crystal Oscillator

TA = 25 °C, VDD = 3.0V if nothing else is stated.

Parameter

Crystal frequency

Min Typ Max Unit Condition/Note

32.768

kHz

Crystal shunt

capacitance

0.9

2.0 pF Simulated over operating conditions

Load capacitance

12

16 pF Simulated over operating conditions

ESR

Start-up time

40

130 kΩ Simulated over operating conditions

400

ms Value is simulated

Table 13: 32.768 kHz Crystal Oscillator Parameters

7.6 Low Power RC Oscillator

TA = 25 °C, VDD = 3.0 V if nothing else is stated.

Parameter

Calibrated frequency2

Frequency accuracy after

calibration

Temperature coefficient

Supply voltage coefficient

Initial calibration time

Min

Typ

Max

32.0 34.7 36.0

±1

Unit

kHz

%

Condition/Note

Calibrated low power RC oscillator frequency is

fXOSC / 750

+0.5

%/°C Frequency drift when temperature changes after

calibration

+3

%/V Frequency drift when supply voltage changes after

calibration

2

ms

When the low power RC oscillator is enabled,

calibration is continuously done in the background

as long as the high speed crystal oscillator is

running.

Table 14: Low Power RC Oscillator Parameters

2 Min figures are given using fXOSC = 24 MHz. Typical figures are given using fXOSC = 26 MHz, and Max

figures are given using fXOSC = 27 MHz

SWRS033E

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