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AM29LL800B Просмотр технического описания (PDF) - Advanced Micro Devices

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AM29LL800B Datasheet PDF : 40 Pages
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ADVANCE INFORMATION
REVISION SUMMARY FOR AM29LL800B
Revision A+1
Distinctive Characteristics
Ultra low power consumption bullet: The typical Auto-
matic Sleep Mode and standby mode currents are both
75 nA.
DC Characteristics, CMOS Compatible
The typical current for ICC3, ICC4, and ICC5 is 75 nA.
Revision A+2
Reset Command
Deleted last paragraph in section, which applied to RE-
SET#, not the reset command.
Revision A+3
Figure 2, In-System Sector Protect/Unprotect
Algorithms
In the sector protect algorithm, added a “PLSCNT=1”
box in the path from “Protect another sector?” back to
setting up the next sector address.
DC Characteristics
Changed Note 1 to indicate that OE# is at VIH for the
listed current.
Erase and Program Operations; Alternate CE#
Controlled Erase/Program Operations
Corrected the notes reference for tWHWH1 and tWHWH2.
These parameters are 100% tested. Corrected the
note reference for tVCS. This parameter is not 100%
tested. Removed tOEH parameters from CE# Con-
trolled Erase/Program Operations table for consistency
with other data sheets.
Temporary Sector Unprotect Table
Added note reference for tVIDR. This parameter is not
100% tested.
Figure 23, Temporary Sector Unprotect Timing
Diagram
Changed the high voltage (VID) on the RESET# wave-
form to 10 V.
Figure 24, Sector Protect/Unprotect Timing
Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million cy-
cles.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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Am29LL800B

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