1N60
TYPICAL CHARACTERISTICS
Power MOSFET
400
350
Capacitance Characteristics
(Non-Repetitive)
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
300
250
Ciss
200
150
100
Coss
Notes:
50 1. VGS=0V
2. f = 1MHz
Crss
0
0.1
1
10
100
Drain-SourceVoltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Gate Charge Characteristics
12
10 VDS=300V
8 VDS=120V
6
VDS=480V
4
2
0 ID=1.2A
0
2
4
6
8 10
Total Gate Charge, QG (nC)
7 of 9
QW-R502-052.P