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Номер в каталоге
Компоненты Описание
K13A60D Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
K13A60D
Silicon N-Channel MOS Type (π -MOSⅦ ) Field Effect Transistor
Toshiba
K13A60D Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
1.2
COMMON SOURCE
VGS
=
10 V
1.0
PULSE TEST
0.8
ID
=
13A
0.6
6.5
3
0.4
0.2
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
TK13A60D
I
DR
– V
DS
100
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
1
10
5
3
1
VGS
=
0,
−
1 V
0.1
0
−
0.2
−
0.4
−
0.6
−
0.8
−
1
−
1.2
DRAIN-SOURCE VOLTAGE V
DS
(V)
10000
1000
100
CAPACITANCE – V
DS
Ciss
Coss
10
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
1
Tc
=
25°C
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
th
– Tc
5
4
3
2
COMMON SOURCE
1
VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
– Tc
80
60
40
20
0
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
VDS
400
16
VDD
=
100 V
300
400
12
200
8
VGS
200 COMMON SOURCE
ID
=
13 A
100
Tc
=
25°C
4
PULSE TEST
0
0
0
20
40
60
80
TOTAL GATE CHARGE Q
g
(nC)
4
2008-09-16
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