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STB7NK80Z

N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z

Electrical characteristics

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5.2 A, VGS = 0

ISD = 5.2 A, di/dt = 100

A/µs

VDD = 50 V, Tj = 150°C

(see Figure 22)

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Pulse width limited by safe operating area

Min. Typ. Max. Unit

5.2 A

-

20.8 A

-

1.6 V

530

ns

- 3.31

µC

12.5

A

Table 8.

Symbol

Gate-source zener diode

Parameter

Test conditions

Min. Typ. Max. Unit

BVGSO Gate-source breakdown voltage IGS= ± 1mA (open drain) 30

V

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Doc ID 8979 Rev 6

5/17

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