PBSS3515VS Просмотр технического описания (PDF) - Philips Electronics
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PBSS3515VS Datasheet PDF : 12 Pages
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Philips Semiconductors
15 V low VCEsat PNP double transistor
Product specification
PBSS3515VS
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per transistor unless otherwise specified
ICBO
IEBO
hFE
VCEsat
RCEsat
VBEsat
VBE
fT
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
VCB = −15 V; IE = 0
VCB = −15 V; IE = 0; Tj = 150 °C
VEB = −5 V; IC = 0
VCE = −2 V; IC = −10 mA
VCE = −2 V; IC = −100 mA; note 1
VCE = −2 V; IC = −500 mA; note 1
IC = −10 mA; IB = −0.5 mA
IC = −200 mA; IB = −10 mA
IC = −500 mA; IB = −50 mA; note 1
IC = −500 mA; IB = −50 mA; note 1
IC = −500 mA; IB = −50 mA; note 1
VCE = −2 V; IC = −100 mA; note 1
IC = −100 mA; VCE = −5 V;
f = 100 MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MIN. TYP. MAX. UNIT
−
−
−100 nA
−
−
−50 µA
−
−
−100 nA
200 −
−
150 −
−
90
−
−
−
−
−25 mV
−
−
−150 mV
−
−
−250 mV
−
300 <500 mΩ
−
−
−1.1 V
−
−
−0.9 V
100 280 −
MHz
−
−
10
pF
2001 Nov 07
4
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