BF720
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
• Device mounted on a PCB area of 1 cm2
Max
89.3
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 200 V
VCB = 200 V
VCB = 300 V
TC = 150 oC
IEBO
V(BR)CEO∗
V(BR)EBO
VCE(sat)∗
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Breakdown Voltage
(IB = 0)
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 10 mA
IE = 100 µA
IC = 30 mA
IB = 5 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 30 mA
IB = 5 mA
hFE∗ DC Current Gain
IC = 25 mA
VCE = 20 V
fT
Transition Frequency IC = 15 mA VCE = 10 V f = 20 MHz
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V f = 1MHz
CEBO
Emitter-Base
Capacitance
IC = 0
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
VEB = 2 V f = 1MHz
Min.
300
5
50
60
Typ.
6
22
Max.
10
10
100
50
0.6
1.2
Unit
nA
µA
µA
nA
V
V
V
V
MHz
pF
pF
2/4