FDC637AN Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDC637AN Datasheet PDF : 5 Pages
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Typical Characteristics (continued)
5
ID = 6.2A
4
VDS = 5V
10V
15V
3
2
1
0
0
2
4
6
8
10
12
14
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics
1800
1500
1200
900
600
300
0
0
f = 1MHz
VGS = 0V
Ciss
Coss
Crss
5
10
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
100
RDS(ON) LIMIT
10
1
VGS= 4.5V
0.1
SINGLE PULSE
RθJA= 156oC/W
TA= 25oC
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
5
SINGLE PULSE
RθJA = 156oC/W
4
TA = 25oC
3
2
1
0
0.1
1
10
100
SINGLE PULSE TIME (SEC)
1000
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.5 D = 0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.005
0.00001
0.0001
0.001
0.01
0.1
t1 , TIME (sec)
R θJA (t) = r(t) * R θJA
R θJA = 156°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1/ t 2
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
SI3446DV Rev. A1
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