NTE157 Просмотр технического описания (PDF) - NTE Electronics

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NTE157

Silicon NPN Transistor Audio Power Amp, High Voltage Converter (Compl to NTE39)

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE

IC = 50mA, VCE = 10V

IC = 100mA, VCE = 10V

IC = 250mA, VCE = 10V

IC = 500mA, VCE = 10V

IC = 100mA, IB = 10mA

IC = 250mA, IB = 25mA

IC = 500mA, IB = 100mA

IC = 100mA, VCE = 10V

25 – –

30 – 250

15 – –

5––

– – 1V

– – 2.5

– – 10

– – 1V

Current–Gain–Bandwidth Product

Output Capacitance

Small–Signal Current Gain

fT

IC = 50mA, VCE = 10V, f = 10MHz, Note 2 10 –

– MHz

Cob VCB = 10V, IE = 0, f = 100kHz

– – 25 pF

hfe IC = 100mA, VCE = 10V, f = 1kHz

20 – –

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity.

.330 (8.38)

Max

.450

(11.4)

Max

.175

(4.45)

Max

.655

(16.6)

Max

EC B

.118 (3.0)

Dia

.030 (.762) Dia

.130 (3.3)

Max

.090 (2.28)

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