STX112(2000) Просмотр технического описания (PDF) - STMicroelectronics
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STX112 Datasheet PDF : 5 Pages
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STX112
SILICON NPN POWER
DARLINGTON TRANSISTOR
s MONOLITHIC DARLINGTON
CONFIGURATION
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The device is a silicon Epitaxial-Base NPN
transistor in monolithic Darlington configuration
mounted in TO-92 plastic package. It is intented
for use in linear and switching applications.
Ordering codes:
STX112
STX112-AP
(shipment in bulk)
(shipment in ammopack)
TO-92
INTERNAL SCHEMATIC DIAGRAM
R1 Typ.= 7K Ω
R2 Typ.= 230
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at Tamb = 25 oC
Storage Temperature
Max. Operating Junction Temperature
October 2000
Value
100
100
5
2
4
50
1.2
-65 to 150
150
Unit
V
V
V
A
A
mA
W
oC
oC
1/5
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