Philips Semiconductors
Silicon MMIC amplifier
Product specification
BGA2003
FEATURES
• Low current
• Very high power gain
• Low noise figure
• Integrated temperature compensated biasing
• Control pin for adjustment bias current
• Supply and RF output pin combined.
PINNING
PIN
1
2
3
4
DESCRIPTION
GND
RF in
CTRL (bias current control)
VS + RF out
APPLICATIONS
• RF front end
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
• Low noise amplifiers
• Satellite television tuners (SATV)
• High frequency oscillators.
handbook, halfpage
3
2
Top view
CTRL VS+RFout
4
BIAS
CIRCUIT
1
MAM427
RFin
GND
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin SOT343R package.
Marking code: A3.
Fig.1 Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA
SYMBOL
VS
IS
PARAMETER
DC supply voltage
DC supply current
MSG
maximum stable gain
NF
noise figure
CONDITIONS
RF input AC coupled
VVS-OUT = 2.5 V; ICTRL = 1 mA;
RF input AC coupled
VVS-OUT = 2.5 V; f = 1800 MHz;
Tamb = 25 °C
VVS-OUT = 2.5 V; f = 1800 MHz; ΓS = Γopt
TYP.
−
11
16
1.8
MAX.
4.5
−
UNIT
V
mA
−
dB
−
dB
1999 Jul 23
2