MT28F002B3 Просмотр технического описания (PDF) - Micron Technology
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MT28F002B3 Datasheet PDF : 31 Pages
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2Mb
SMART 3 BOOT BLOCK FLASH MEMORY
SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS: WE#-CONTROLLED WRITES
Commercial Temperature (0°C ≤ TA ≤ +70°C) and Extended Temperature (-40°C ≤ TA ≤ +85°C); VCC = +3.3V ±0.3V
AC CHARACTERISTICS
PARAMETER
Address hold time from WE# HIGH
Data hold time from WE# HIGH
CE# setup time to WE# LOW
CE# hold time from WE# HIGH
VPP setup time to WE# HIGH
VPP setup time to WE# HIGH
RP# HIGH to WE# LOW delay
RP# at VHH or WP# HIGH setup time to WE# HIGH
WRITE duration (WORD or BYTE WRITE)
Boot BLOCK ERASE duration
Parameter BLOCK ERASE duration
Main BLOCK ERASE duration
WE# HIGH to busy status (SR7 = 0)
VPP hold time from status data valid
RP# at VHH or WP# HIGH hold time from status data valid
Boot block relock delay time
SYMBOL
tAH
tDH
tCS
tCH
tVPS1
tVPS2
tRS
tRHS
tWED1
tWED2
tWED3
tWED4
tWB
tVPH
tRHH
tREL
-9/-10 ET
MIN
MAX
10
0
0
0
200
100
1,000
200
6
300
300
600
200
0
0
200
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
ms
ms
ns
ns
ns
ns
NOTES
1
2
3
4
3, 4
4
4
5
4
3
6
NOTE: 1. Measured with VPP = VPPH1 = 3.3V.
2. Measured with VPP = VPPH2 = 5V.
3. RP# should be held at VHH or WP# held HIGH until boot block WRITE or ERASE is complete.
4. WRITE/ERASE times are measured to valid status register data (SR7 = 1).
5. Polling status register before tWB is met may falsely indicate WRITE or ERASE completion.
6. tREL is required to relock boot block after WRITE or ERASE to boot block.
2Mb Smart 3 Boot Block Flash Memory
F48.p65 – Rev. 1/00
25
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
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