TS925 Просмотр технического описания (PDF) - STMicroelectronics
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TS925 Datasheet PDF : 17 Pages
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Electrical Characteristics
2 Electrical Characteristics
TS925
Table 3.
Symbol
Electrical characteristics for VCC = 3V, VDD = 0V, Vicm = VCC/2, RL connected
to VCC/2, Tamb = 25°C (unless otherwise specified)
Parameter
Conditions
Min. Typ. Max. Unit
Vio Input Offset Voltage
at Tamb = +25°C
TS925
TS925A
at Tmin. ≤ Tamb ≤ Tmax:
TS925
TS925A
3
0.9
mV
5
1.8
DVio Input Offset Voltage Drift
2
µV/°C
Iio Input Offset Current
Vout = 1.5V
1
30
nA
Iib Input Bias Current
Vout = 2.5V
15 100
nA
VOH High Level Output Voltage
RL = 10kΩ
2.90
RL = 600Ω
2.87
V
RL = 32Ω
2.63
VOL Low Level Output Voltage
RL = 10kΩ
RL = 600Ω
RL = 32Ω
50
100
mV
180
Avd Large Signal Voltage Gain
Vout = 2Vpk-pk
RL = 10kΩ
RL = 600Ω
RL = 32Ω
200
V/mV
35
16
GBP Gain Bandwidth Product
RL = 600Ω
4
MHz
CMR Common Mode Rejection Ratio
60 80
dB
SVR Supply Voltage Rejection Ratio Vcc = 2.7 to 3.3V
60 85
dB
Io Output Short-Circuit Current
50 80
mA
SR Slew Rate
0.7 1.3
V/µs
Pm Phase Margin at Unit Gain
RL = 600Ω, CL =100pF
68
Degrees
GM Gain Margin
RL = 600Ω, CL =100pF
12
dB
en Equivalent Input Noise Voltage f = 1kHz
9
--n----V-----
Hz
THD Total Harmonic Distortion
Cs Channel Separation
Vout = 2Vpk-pk,
f = 1kHz, Av = 1,
RL = 600Ω
0.01
%
120
dB
4/17
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