MGFC5214 Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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MGFC5214 Datasheet PDF : 4 Pages
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PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5214
Q-Band 2-Stage Power Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µM)
X=1.99 mm
Y=1.60 mm
Bond Pad Dimension=0.07 x 0.15 mm2 (RF)
0.10 x 0.10 mm2 (DC)
(680.0, 1470.0)
(1555.0, 1470.0)
(505.0, 1470.0) (1165.0, 1470.0)
(125.0, 1470.0)
(105.0, 800.0)
(1885.0, 800.0)
(125.0, 130.0)
(0, 0)
GND
(505.0, 130.0)
(1165.0, 130.0)
(680.0, 130.0)
(1555.0, 130.0)
Vg1 Vd1
Vg2
Vd2
RFin
RFout
GND (Vg1) Vd1
Vg2
Vd2
MITSUBISHI
ELECTRIC
as of July '98
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