2N5401CTA Просмотр технического описания (PDF) - Fairchild Semiconductor
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2N5401CTA Datasheet PDF : 4 Pages
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2N5401
Amplifier Transistor
• Collector-Emitter Voltage: VCEO= 150V
• Collector Dissipation: PC (max)=625mW
• Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Value
-160
-150
-5
-600
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
fT
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
IC= -100µA, IE=0
IC= -1mA, IB=0
IE= -10µA, IC=0
VCB= -120V, IE=0
VEB= -3V, IC=0
IC= -1mA, VCE= -5V
IC= -10mA, VCE= -5V
IC= -50mA, VCE= -5V
IC= -10mA, IB= -1mA
IC= -50mA, IB= -5mA
IC= -10mA, IB= -1mA
IC= -50mA, IB= -5mA
IC= -10mA, VCE= -10V,
f=100MHz
Cob
Output Capacitance
NF
Noise Figure
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
VCB= -10V, IE=0, f=1MHz
IC= -250µA, VCE= -5V
RS=1KΩ
f=10Hz to 15.7KHz
Min.
-160
-150
-5
30
60
50
100
Typ.
Max.
-50
-50
Units
V
V
V
nA
nA
240
-0.2
V
-0.5
V
-1
V
-1
V
400 MHz
6
pF
8
dB
©2004 Fairchild Semiconductor Corporation
Rev. B, May 2004
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