KRC246M Просмотр технического описания (PDF) - KEC

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производитель

KRC246M

EPITAXIAL PLANAR NPN TRANSISTOR

KEC 

SEMICONDUCTOR

TECHNICAL DATA

HIGH CURRENT SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

FEATURES

ᴌWith Built-in Bias Resistors.

ᴌSimplify Circuit Design.

ᴌReduce a Quantity of Parts and Manufacturing Process.

ᴌHigh Output Current : 800mA.

EQUIVALENT CIRCUIT

OUT

R1

IN

R2

COMMON

TYPE NO.

KRC241M

KRC242M

KRC243M

KRC244M

KRC245M

KRC246M

R1(kή)

1

2.2

4.7

10

1

2.2

R2(kή)

1

2.2

4.7

10

10

10

KRC241M~KRC246M

EPITAXIAL PLANAR NPN TRANSISTOR

B

H

M

C

EE

1 2 3N

L

1. EMITTER

2. COLLECTOR

3. BASE

O DIM MILLIMETERS

A

3.20 MAX

B

4.30 MAX

C

0.55 MAX

D

2.40+_ 0.15

E

1.27

F

2.30

G

14.00+_ 0.50

H

0.60 MAX

J

1.05

K

1.45

L

25

M

0.80

N

0.55 MAX

O

0.75

TO-92M

MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

Output Voltage

KRC241Mᴕ 246M

KRC241M

KRC242M

Input Voltage

KRC243M

KRC244M

KRC245M

KRC246M

Output Current

Power Dissipation

Junction Temperature

KRC241Mᴕ 246M

Storage Temperature Range

SYMBOL

VO

VI

IO

PD

Tj

Tstg

RATING

50

10, -10

12, -10

20, -10

30, -10

10, -5

12, -6

800

400

150

-55ᴕ150

UNIT

V

V

mA

mW

ᴱ

ᴱ

1996. 9. 9

Revision No : 1

1/5

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