FMBA14 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FMBA14 Datasheet PDF : 5 Pages
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FMBA14
C2
E1
C1
B2
E2
pin #1 B1
SuperSOT-6
Mark: .1N
Dot denotes pin #1
NPN Multi-Chip Darlington Transistor
This device is designed for applications requiring extremely high current
gain at collector currents to 1.0 A. Sourced from Process 05.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCES
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
30
V
30
V
10
V
4
1.2
A
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Max
FMBA14
700
5.6
180
Units
mW
mW/°C
°C/W
1998 Fairchild Semiconductor Corporation
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