[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features：
1) VDS=30V,ID=20A,RDS(ON)<6mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features：
1) VDS=650V,ID=7A,RDS(ON)<1.25Ω @VGS=10V
2) Low gate charge.
3) Green device available.
4) advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features：
1) VDS=40V,ID=120A,RDS(ON)<4mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features：
1) VDS=600V,ID=2A,RDS(ON)≤5Ω @VGS=10V
2) Low gate charge.
3) Green device available.
4) advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features：
1) VDS=30V,ID=11A,RDS(ON)<10mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) advanced high cell denity trench technology for ultra low RDS(ON).
5) Excellent package for good heat dissipation.

[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.

Features：
1) VDS=100V,ID=15A,RDS(ON)< 100mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.

Features：
1) VDS=100V,ID=3A,RDS(ON)<135mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.

Features：
1) VDS=650V,ID=7A,RDS(ON)<1.25Ω @VGS=10V
2) Low gate charge.
3) Green device available.
4) advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Description：
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.

Features：
1) VDS=-30V,ID=-15A,RDS(ON)<11mΩ @VGS=-20V
2) Low gate charge.
3) Green device available.
4) advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.

Features：
1) VDS=60V,ID=8A,RDS(ON)<20mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.