Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

P/N + Описание + Поиск контента

Ключевые слова :
Номер в каталоге(s) : AN605
Vishay
Vishay Semiconductors
Компоненты Описание : Power MOSFET Basics: Understanding MOSFET Characteristics Associated With The Figure of Merit

INTRODUCTION
Power MOSFETs have become the standard choice as the main switching device for low-voltage (<200 V) switchmode power-supply (SMPS) converter applications. However using manufacturers’ datasheets to choose or size the correct device for a specific circuit topology is becoming increasingly difficult. The main criteria for MOSFET selection are the power loss associated with the MOSFET (related to the overall efficiency of the SMPS) and the power-dissipation capability of the MOSFET (related to the maximum junction temperature and thermal performance of the package). This application note focuses on the basic characteristics and understanding of the MOSFET.

There are several factors which affect the gate of the MOSFET, and it is necessary to understand the fundamental basis of the device structure before the MOSFET behavior can be explained. This application note details the basic structure of the Trench MOSFET structure, identifying the parasitic components and defining related terminology. It also describes how and why the parasitic parameters occur.

Номер в каталоге(s) : MRF151A
MACOM
Tyco Electronics
Компоненты Описание : The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

Номер в каталоге(s) : 2SK1938 2SK1938-01R K1938-01R
Fuji
Fuji Electric
Компоненты Описание : Power MOSFET(N-channel enhancement mode power MOSFET)

Power MOSFET(N-channel enhancement mode power MOSFET)

Номер в каталоге(s) : VEC2814
SANYO
SANYO -> Panasonic
Компоненты Описание : MOSFET : N-Channel Silicon MOSFET/SBD : Schottky Barrier Diode

General-Purpose Switching Device Applications



Features

• DC / DC converter.

• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package

facilitating high-density mounting.



• [MOSFET]

• 1.8V drive.



• [SBD]

• Short reverse recovery time.

• Low forward voltage.


Номер в каталоге(s) : VEC2820
SANYO
SANYO -> Panasonic
Компоненты Описание : MOSFET : N-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode

General-Purpose Switching Device Applications



Features

• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode (SS10015M) contained in one

package facilitating high-density mounting.



• [MOSFET]

• Low ON-resistance.

• 1.8V drive.



• [SBD]

• Short reverse recovery time.

• Low forward voltage.


Номер в каталоге(s) : VEC2811
SANYO
SANYO -> Panasonic
Компоненты Описание : MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode

Features

• DC/DC converter.

• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package

facilitating high-density mounting.



• [MOSFET]

• Low ON-resistance.

• 4V drive.



• [SBD]

• Short reverse recovery time.

• Low forward voltage.


Номер в каталоге(s) : VEC2812
SANYO
SANYO -> Panasonic
Компоненты Описание : MOSFET : N-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode

General-Purpose Switching Device Applications



Features

• DC / DC converter.

• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package

facilitating high-density mounting.



• [MOSFET]

• Low ON-resistance.

• 1.8V drive.



• [SBD]

• Short reverse recovery time.

• Low forward voltage.


Номер в каталоге(s) : VEC2813
SANYO
SANYO -> Panasonic
Компоненты Описание : MOSFET : N-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode

General-Purpose Switching Device Applications



Features

• DC / DC converter.

• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package

facilitating high-density mounting.



• [MOSFET]

• Low ON-resistance.

• 1.8V drive.



• [SBD]

• Short reverse recovery time.

• Low forward voltage.


Номер в каталоге(s) : VEC2803
SANYO
SANYO -> Panasonic
Компоненты Описание : MOSFET : P-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode

General-Purpose Switching Device Applications



Features

• DC/DC converter.

• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package

facilitating high-density mounting.



[MOSFET]

• Low ON-resistance.

• 4V drive.



[SBD]

• Short reverse recovery time.

• Low forward voltage.


Номер в каталоге(s) : VEC2801
SANYO
SANYO -> Panasonic
Компоненты Описание : MOSFET : P-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode

General-Purpose Switching Device Applications



Features

• The best suited for DC / DC converter.

• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package

facilitating high-density mounting.



[MOSFET]

• Low ON-resistance.

• 1.8V drive.



[SBD]

• Short reverse recovery time.

• Low forward voltage.


12345678910 Next



All Rights Reserved© datasheetq.com  [Privacy Policy ] [ Request Datasheet] [Contact Us]