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Номер в каталоге(s) : K699
NEC
NEC => Renesas Technology
Компоненты Описание : N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

Номер в каталоге(s) : K773
NEC
NEC => Renesas Technology
Компоненты Описание : N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

Номер в каталоге(s) : 2SK2320 K2320
ETC2
Unspecified
Компоненты Описание : FIELD EFFECT TRANSISTOR Silicon N-CHANNEL MOS Type

FIELD EFFECT TRANSISTOR Silicon N-CHANNEL MOS Type

Номер в каталоге(s) : K704 2SK704
NEC
NEC => Renesas Technology
Компоненты Описание : N - CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

N - CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

Номер в каталоге(s) : K2078 2SK2078
Toshiba
Toshiba
Компоненты Описание : FIELD EFFECT TRANSISTOR Silicon N CHANNEL MOS Type

FIELD EFFECT TRANSISTOR

Silicon N CHANNEL MOS Type (π-MOS II.5)

High Speed, High Current Switching Applications

Номер в каталоге(s) : K736 2SK736
NEC
NEC => Renesas Technology
Компоненты Описание : N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

DESCRIPTION
The 2SK736 is N-CHANNEL MOS FIELD EFFECT Power TRANSISTOR designed for solenoid, motor and lamp driver.

Номер в каталоге(s) : 2K2139 K2139
NEC
NEC => Renesas Technology
Компоненты Описание : MOS FIELD EFFECT TRANSISTOR

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE



DESCRIPTION

The 2SK2139 is N-CHANNEL Power MOS FIELD EFFECT TRANSISTOR designed for high voltage switching applications.



FEATURES

• Low On-Resistance

  RDS(on)= 1.5 ΩMAX. (VGS= 10 V, ID= 2.5 A)

• Low CissCiss= 930 pF TYP.

• High Avalanche Capability Ratings

• Isolate TO-220 (MP-45F) Package


Номер в каталоге(s) : K2413
NEC
NEC => Renesas Technology
Компоненты Описание : MOS FIELD EFFECT TRANSISTOR / N-CHANNEL MOS FIELD EFFECT TRANSISTOR

The 2SK2413 is N-CHANNEL MOS FIELD EFFECT TRANSISTOR designed for high speed switching applications.



 



• Low On-Resistance

  RDS(on)1= 70 mΩMAX. (@ VGS= 10 V, ID= 5.0 A)

  RDS(on)2= 95 mΩMAX. (@ VGS= 4 V, ID= 5.0 A)



• Low CissCiss= 860 pF TYP.



• Built-in G-S Gate Protection Diodes



• High Avalanche Capability Ratings


Номер в каталоге(s) : K784 2SK784
NEC
NEC => Renesas Technology
Компоненты Описание : N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

DESCRIPTION
The 2SK784 is N-CHANNEL MOS FIELD EFFECT Power TRANSISTOR designed for switching power supplies DC-DC converters.

Номер в каталоге(s) : K2498
NEC
NEC => Renesas Technology
Компоненты Описание : N-CHANNEL MOS FIELD EFFECT TRANSISTOR

2SK2498 is N-CHANNEL MOS FIELD EFFECT TRANSISTOR designed for high current switching applications.




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