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Номер в каталоге(s) : IRG4PC30SPBF
IR
International Rectifier
Компоненты Описание : INSULATED GATE BIPOLAR Transistor Standard Speed IGBT

INSULATED GATE BIPOLAR Transistor Standard Speed IGBT

Номер в каталоге(s) : FB20R06XE3
EUPEC
eupec GmbH
Компоненты Описание : IGBT-modules IGBT-inverter

IGBT-modules IGBT-inverter

Номер в каталоге(s) : IRG4BC40UPBF IRG4BC40UPBF
IR
International Rectifier
Компоненты Описание : INSULATED GATE BIPOLAR Transistor UltraFast Speed IGBT

INSULATED GATE BIPOLAR Transistor UltraFast Speed IGBT

Номер в каталоге(s) : GA200TS60U
IR
International Rectifier
Компоненты Описание : HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

HALF-BRIDGE IGBT INT-A-PAK

Ultra-Fast Speed IGBT



Features

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode

• Very low conduction and switching losses

• HEXFRED™antiparallel diodes with ultra-soft recovery

• Industry standard package

• UL approved



Benefits

• Increased operating efficiency

• Direct mounting to heatsink

• Performance optimized for power conversion: UPS, SMPS, Welding

• Lower EMI, requires less snubbing

• Generation 4 IGBT technology


Номер в каталоге(s) : IXZR16N60 IXZR16N60A IXZR16N60B
IXYS
IXYS CORPORATION
Компоненты Описание : NChannel Enhancement Mode RF MOSFET

VDSS = 600 V

ID25 = 18 A

RDS(on) ≤ 0.56 Ω

PDC = 350



Low Capacitance Z-MOSTM MOSFET Process

Optimized for RF Operation

Ideal for Class C, D, & E Applications



Features

• Isolated Substrate

− high isolation voltage (>2500V)

− excellent thermal transfer

− Increased temperature and power cycling capability

• IXYS advanced Z-MOS process

• Low gate charge and capacitances

− easier to drive

− faster switching

• Low RDS(on)

• Very low insertion inductance (<2nH)

• No beryllium oxide (BeO) or other hazardous materials



Advantages

• High Performance RF Z-MOS™

• Optimized for RF and high speed

• Common Source RF Package

A = Gate Source Drain

B = Drain Source Gate

• Isolated Package, no insulator required


Номер в каталоге(s) : GA200TS60UX
IR
International Rectifier
Компоненты Описание : HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

HALF-BRIDGE IGBT INT-A-PAK

Ultra-Fast Speed IGBT



Features

• Generation 4 IGBT technology

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode

• Very low conduction and switching losses

• HEXFREDTM antiparallel diodes with ultra-soft recovery

• Industry standard package

• UL approved



Benefits

• Increased operating efficiency

• Direct mounting to heatsink

• Performance optimized for power conversion: UPS, SMPS, Welding

• Low EMI, requires less snubbing


Номер в каталоге(s) : MG600Q2YS60A
Toshiba
Toshiba
Компоненты Описание : TOSHIBA IGBT MODULE SILICON N CHANNEL IGBT

TOSHIBA IGBT MODULE SILICON N CHANNEL IGBT

HIGH POWER SWITHCING APPLICATIONS
MOTOR CONTROL APPLICATIONS

● The Electrodes are Isolated from Case.
● Enhancement−Mode
● Thermal Output Terminal (TH)

Номер в каталоге(s) : IRG4PC30FDPBF
IR
International Rectifier
Компоненты Описание : INSULATED GATE BIPOLAR Transistor WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT

VCES = 600V

VCE(on) typ. = 1.59V

@VGE = 15V, IC = 17A



Features

• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard TO-247AC package

• Lead-Free



Benefits

• Generation -4 IGBT's offer highest efficiencies available

IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing

• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's


Номер в каталоге(s) : IRG4PC50FDPBF
IR
International Rectifier
Компоненты Описание : INSULATED GATE BIPOLAR Transistor WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT

VCES = 600V

VCE(on) typ. = 1.45V

@VGE = 15V, IC = 39A



Benefits

• Generation -4 IGBT's offer highest efficiencies available

IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing

• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's



Features

• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard TO-247AC package

• Lead-Free



 


Номер в каталоге(s) : OM6508SA OM6509SA
Omnirel
Omnirel Corp => IRF
Компоненты Описание : INSULATED GATE BIPOLAR Transistor (IGBT) IN A HERMETIC TO-254AA PACKAGE

500 Volt, 5 And 10 Amp, N-Channel IGBT With a Soft Recovery Diode In A Hermetic Metal Package



DESCRIPTION

This power module includes an IGBT power Transistor which features a high impedance insulated gate and the low on-resistance characteristics of bipolar Transistor with a free wheeling diode connected across the emitter and collector. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters.



FEATURES

• Isolated Hermetic Metal Package

• High Input Impedance

• Low On-Voltage

• High Current Capability

• Fast Turn-Off

• Low Conductive Losses

• Available Screened To MIL-S-19500, TX, TXV And S Levels

• Free Wheeling Diode

• Ceramic Feedthroughs Available



 


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