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Компоненты Описание : High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 20102025 MHz
Компоненты Описание : High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 20102025 MHz
Infineon Technologies
Infineon Technologies
Компоненты Описание : High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz
Номер в каталоге(s) : PTFB241402F
Infineon Technologies
Infineon Technologies
Компоненты Описание : High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz (Rev - 2010)
Номер в каталоге(s) : PTF180101S
Infineon Technologies
Infineon Technologies
Компоненты Описание : LDMOS RF Power Field Effect Transistor (Rev - 2007)
Номер в каталоге(s) : PTF180101S PTF180101
Infineon Technologies
Infineon Technologies
Компоненты Описание : LDMOS RF Power Field Effect Transistor
Номер в каталоге(s) : PTF210451E PTF210451F
Infineon Technologies
Infineon Technologies
Компоненты Описание : Thermally-Enhanced High Power RF LDMOS FETs 45 W, 20102025 MHz and 2110 – 2170 MHz
Номер в каталоге(s) : PTFA220121MV4R1KV4XUMA1 PTFA220121M PTFA220121MV4R1K
Infineon Technologies
Infineon Technologies
Компоненты Описание : High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz
Номер в каталоге(s) : PTFC270101MV1R1KXUMA1 PTFC270101M PTFC270101MV1R1K
Infineon Technologies
Infineon Technologies
Компоненты Описание : High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Номер в каталоге(s) : PTFC270101M-V1-R1K PTFC270101M PTFC270101MV1R1K
Cree, Inc
Cree, Inc
Компоненты Описание : High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Номер в каталоге(s) : PTFC270051MV2R1KXUMA1 PTFC270051M PTFC270051MV2R1K
Infineon Technologies
Infineon Technologies
Компоненты Описание : High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz
Номер в каталоге(s) : PTFC270101MV1R1KXUMA1 PTFC270101M PTFC270101MV1R1K
Infineon Technologies
Infineon Technologies
Компоненты Описание : High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz (Rev - 2015)
Компоненты Описание : High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Номер в каталоге(s) : PTFA220121M-V4-R1K PTFA220121M PTFA220121MV4R1K
Cree, Inc
Cree, Inc
Компоненты Описание : High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz
Компоненты Описание : High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Номер в каталоге(s) : PTFC270051M-V2-R1K PTFC270051M PTFC270051MV2R1K
Cree, Inc
Cree, Inc
Компоненты Описание : High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz
Компоненты Описание : ECONOLINE - DC/DC-Converter RF Series, 1.25 Watt, DIP8 (Single & Dual Output)
Infineon Technologies
Infineon Technologies
Компоненты Описание : High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz (Rev - 2015)
Номер в каталоге(s) : PTFA220041MV4R1K PTFA220041M PTFA220041MV4R1KXUMA1
Infineon Technologies
Infineon Technologies
Компоненты Описание : High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz
Компоненты Описание : Directional Couplers, Multi-Octave
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