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Номер в каталоге(s) : NTE325
NTE-Electronic
NTE Electronics
Компоненты Описание : Silicon NPN RF Power Transistor 50W @ 30MHz

Description:
The NTE325 is a Silicon NPN RF power Transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz.

Features:
● Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11dB Efficiency = 50%

Номер в каталоге(s) : STK4192 STK4192II
SANYO
SANYO -> Panasonic
Компоненты Описание : AF Power Amplifier (Split Power Supply) (50W + 50W min, THD = 0.4%)

AF Power Amplifier (Split Power Supply)

(50W + 50W min, THD = 0.4%)



Features

• The STK4102II series (STK4192II) and STK4101V series (high-grade type) are pin-compatible in the out put range of 6W to 50W and enable easy design.

• Small-sized package whose pin assignment is the same as that of the STK4101II series

• Built-in muting circuit to cut off various kinds of pop noise

• Greatly reduced heat sink due to substrate temperature 125°C guaranteed

• Excellent cost performance



 


Diotec
Diotec Semiconductor Germany
Компоненты Описание : Silicon-Bridge Rectifiers

Silicon-Bridge Rectifiers

• Nominal current                          2.3 / 1.5 A
• Alternating input voltage            40…500 V
• Plastic case                     19 x 5 x 10 [mm]
• Weight approx.                                   1.8 g
• Standard packaging: bulk

Номер в каталоге(s) : STK433-760-E
SANYO
SANYO -> Panasonic
Компоненты Описание : 2-channel class AB audio power IC, 50W+50W

Overview

The STK433-760-E is a hybrid IC designed to be used in 50W ×50W (2-channel) class AB audio power amplifiers.



Features

•Miniature package (47.0mm ×25.6mm ×9.0mm)

•Output load impedance: RL= 6Ω to 4Ω supported

•Built-in stand-by circuit, output limiting circuit for substrate overheating, and load short-circuit protection circuit constituted by monolithic ICs



Applications

•Audio power amplifiers.

 


Номер в каталоге(s) : BU500
Motorola
Motorola => Freescale
Компоненты Описание : NPN Silicon POWER METAL Transistor

6 AMPERES NPN Silicon POWER METAL Transistor 1500 VOLTS 75 WATTS



HORIZONTAL DEFLECTION Transistor


Номер в каталоге(s) : BULD25D BULD25DR BULD25SL
Transys
Transys Electronics
Компоненты Описание : NPN Silicon Transistor WITH INTEGRATED Diode

NPN Silicon Transistor WITH INTEGRATED Diode

Номер в каталоге(s) : MMBT8550-1.5A
DGNJDZ
Nanjing International Group Co
Компоненты Описание : PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor

for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.

As complementary type the NPN Transistor
MMBT8050 (1.5A) is recommended.

Номер в каталоге(s) : SFT1618
SSDI
Solid State Devices, Inc.
Компоненты Описание : 10 AMP EAST SWITCHING HIGH VOLTAGE NPN Transistor 1500 VOLTS

10 AMP EAST SWITCHING HIGH VOLTAGE NPN Transistor 1500 VOLTS

FEATURES
► BVCEO 800 VOLTS MINIMUM
► HIGH GAIN FROM 1mA TO 10A
► VERY LOW LEAKAGE
► FAST SWITCHING, 500ns ON-TIME
► GOLD EUTECTIC DIE ATTACH
► LOW THERMAL RESISTANCE

Номер в каталоге(s) : SFT1618
ETC
Unspecified
Компоненты Описание : 10 AMP EAST SWITCHING HIGH VOLTAGE NPN Transistor 1500 VOLTS

[SSDI]

10 AMP EAST SWITCHING HIGH VOLTAGE NPN Transistor 1500 VOLTS

FEATURES
► BVCEO 800 VOLTS MINIMUM
► HIGH GAIN FROM 1mA TO 10A
► VERY LOW LEAKAGE
► FAST SWITCHING, 500ns ON-TIME
► GOLD EUTECTIC DIE ATTACH
► LOW THERMAL RESISTANCE

Номер в каталоге(s) : STP12NK80Z STB12NK80Z STW12NK80Z
NJSEMI
New Jersey Semiconductor
Компоненты Описание : N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET

■ TYPICAL Ros(on) = 0.65 Q
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIE

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