Description:The NTE325 is a Silicon NPN RF power Transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz.
Features:● Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11dB Efficiency = 50%
AF Power Amplifier (Split Power Supply)
(50W + 50W min, THD = 0.4%)
• The STK4102II series (STK4192II) and STK4101V series (high-grade type) are pin-compatible in the out put range of 6W to 50W and enable easy design.
• Small-sized package whose pin assignment is the same as that of the STK4101II series
• Built-in muting circuit to cut off various kinds of pop noise
• Greatly reduced heat sink due to substrate temperature 125°C guaranteed
• Excellent cost performance
• Nominal current 2.3 / 1.5 A• Alternating input voltage 40…500 V• Plastic case 19 x 5 x 10 [mm]• Weight approx. 1.8 g• Standard packaging: bulk
The STK433-760-E is a hybrid IC designed to be used in 50W ×50W (2-channel) class AB audio power amplifiers.
•Miniature package (47.0mm ×25.6mm ×9.0mm)
•Output load impedance: RL= 6Ω to 4Ω supported
•Built-in stand-by circuit, output limiting circuit for substrate overheating, and load short-circuit protection circuit constituted by monolithic ICs
•Audio power amplifiers.
6 AMPERES NPN Silicon POWER METAL Transistor 1500 VOLTS 75 WATTS
HORIZONTAL DEFLECTION Transistor
NPN Silicon Transistor WITH INTEGRATED Diode
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especiallysuitable for AF-driver stages and low power outputstages.
As complementary type the NPN TransistorMMBT8050 (1.5A) is recommended.
10 AMP EAST SWITCHING HIGH VOLTAGE NPN Transistor 1500 VOLTS
FEATURES► BVCEO 800 VOLTS MINIMUM► HIGH GAIN FROM 1mA TO 10A► VERY LOW LEAKAGE► FAST SWITCHING, 500ns ON-TIME► GOLD EUTECTIC DIE ATTACH► LOW THERMAL RESISTANCE
N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET
■ TYPICAL Ros(on) = 0.65 Q■ EXTREMELY HIGH dv/dt CAPABILITY■ 100% AVALANCHE TESTED■ GATE CHARGE MINIMIZED■ VERY LOW INTRINSIC CAPACITANCES■ VERY GOOD MANUFACTURING REPEATIBILITY
APPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIE