P/N + Описание + Поиск контента
Номер в каталоге(s) : NX5322 NX5322EH-AZ NX5322EK-AZ
California Eastern Laboratories.
Компоненты Описание : 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
Номер в каталоге(s) : NX5322 NX5322EH NX5322EK
NEC => Renesas Technology
Компоненты Описание : 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
Номер в каталоге(s) : NX5321 NX5321EH-AZ NX5321EK-AZ
California Eastern Laboratories.
Компоненты Описание : 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
Номер в каталоге(s) : NX5310 NX5310EH-AZ NX5310EK-AZ NX5310EK NX5310EH
California Eastern Laboratories.
Компоненты Описание : 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE (Rev - 2006)
Номер в каталоге(s) : NX5321 NX5321EH NX5321EK
NEC => Renesas Technology
Компоненты Описание : 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
Номер в каталоге(s) : NX5312 NX5312EH-AZ NX5312EK-AZ
California Eastern Laboratories.
Компоненты Описание : NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS (Rev - V2)
Номер в каталоге(s) : NX5304 NX5304EH NX5304EK
NEC => Renesas Technology
Компоненты Описание : NEC's 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
Номер в каталоге(s) : NX5304 NX5304EH NX5304EK
California Eastern Laboratories.
Компоненты Описание : NEC's 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
Номер в каталоге(s) : NX5310 NX5310EH-AZ NX5310EK-AZ NX5310EK NX5310EH
California Eastern Laboratories.
Компоненты Описание : NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s AND FTTH APPLICATIONS
Номер в каталоге(s) : NX6506 NX6506GH-AZ NX6506GK-AZ
California Eastern Laboratories.
Компоненты Описание : NECʼs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS
Номер в каталоге(s) : NX6309GH NX6309GH-AZ
California Eastern Laboratories.
Компоненты Описание : 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Номер в каталоге(s) : NX6308GH PL10692EJ03V0DS
Renesas Electronics
Компоненты Описание : 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Номер в каталоге(s) : NX6309GH
Renesas Electronics
Компоненты Описание : 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Номер в каталоге(s) : NX6308GH NX6308GH-AZ
California Eastern Laboratories.
Компоненты Описание : 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Номер в каталоге(s) : ANCC-151A ANCC-152A ANCC-153A ANCC-154A ANCC-155A ANCC-156A ANCC-15X ANCC-151A-S-12-NM ANCC-152A-S-12-NM ANCC-153A-S-12-NM
Tyco Electronics
Компоненты Описание : PCS and WLAN Omni Antennas
Номер в каталоге(s) : NX6301 NX6301GH NX6301GI NX6301GJ NX6301GK NX6301S NX6301SH NX6301SI NX6301SJ NX6301SK
California Eastern Laboratories.
Компоненты Описание : NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
Номер в каталоге(s) : NX6306SK NX6306SH NX6306S NX6306GK NX6306GH NX6306G NX6306 NX63067H NX63067K
California Eastern Laboratories.
Компоненты Описание : NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
Номер в каталоге(s) : NX5306 NX5306EH NX5306EK
California Eastern Laboratories.
Компоненты Описание : NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
Номер в каталоге(s) : NX7301BA NX7301BA-CC NX7301CA-CC
California Eastern Laboratories.
Компоненты Описание : NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
Номер в каталоге(s) : NX8315XC PL10789EJ01V0DS
Renesas Electronics
Компоненты Описание : 1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
| 12345678910 Next |