STFW60N65M5 Даташит - ST-Microelectronics
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STFW60N65M5
STMicroelectronics
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Description
The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
■ Worldwide best RDS(on) * area amongst the
silicon based devices
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
Application
Switching applications
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производитель
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