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STF6N95K5(2015) Даташит - ST-Microelectronics

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Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features
• Industry’s lowest RDS(on) * area
• Industry’s best figure of merit (FoM)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected

Applications
• Switching applications

 

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Компоненты Описание
PDF
производитель
N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFET in a TO-220FP package ( Rev : 2014 )
STMicroelectronics
N-channel 950 V, 0.110 Ω typ., 38 A MDmesh™ K5 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 900 V, 0.60 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 1050 V, 2.9 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 900 V, 0.91 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a TO-220FP package
STMicroelectronics
Automotive-grade N-channel 950 V, 0.280 Ω typ., 17.5 A MDmesh™ K5 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads
STMicroelectronics
N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-3PF package
STMicroelectronics

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